发明名称 Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties
摘要 A semiconductor device has a substrate and first conductive pads formed over the substrate. An interconnect surface area of the first conductive pads is expanded by forming a plurality of recesses into the first conductive pads. The recesses can be an arrangement of concentric rings, arrangement of circular recesses, or arrangement of parallel linear trenches. Alternatively, the interconnect surface area of the first conductive pads is expanded by forming a second conductive pad over the first conductive pad. A semiconductor die has a plurality of interconnect structures formed over a surface of the semiconductor die. The semiconductor die is mounted to the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structure to the first conductive pads. A mold underfill material is deposited between the semiconductor die and substrate.
申请公布号 US8409979(B2) 申请公布日期 2013.04.02
申请号 US201113149669 申请日期 2011.05.31
申请人 CHOI DAESIK;KIM OHHAN;CHO SUNGWON;STATS CHIPPAC, LTD. 发明人 CHOI DAESIK;KIM OHHAN;CHO SUNGWON
分类号 H01L21/44;H01L21/50;H01L23/48;H01L23/485;H01L23/498;H01L23/52 主分类号 H01L21/44
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