| 摘要 |
A thin film transistor fabricating method is disclosed. The thin film transistor fabricating method comprises providing a substrate; forming an oxide semiconductor layer on an upper surface of the substrate; forming a gate insulating layer on an upper surface of the oxide semiconductor layer; masking a portion of the oxide semiconductor layer with the gate insulating layer; irradiating the oxide semiconductor layer with irradiating light having photon energy less than a band gap of the oxide semiconductor layer; forming a drain region and a source region at lateral portions of the oxide semiconductor layer exposed to the irradiating light, and forming a channel region in the portion of the oxide semiconductor layer masked by the gate insulating layer; and forming a gate electrode on an upper surface of the gate insulating layer. |
