| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device module capable of a high-temperature operation, which can achieve downsizing and weight saving. <P>SOLUTION: A semiconductor device module comprises: a case 18 surrounding a P-side circuit and an N-side circuit; and an encapsulation material 16 charged in a housing composed of the case 18 and a heat sink 4 for resin molding a P-side circuit unit 210 and an N-side circuit unit 220. Each of a second main electrode terminal 6A of the P-side circuit unit 210 and a first main electrode terminal 7A of the N-side circuit unit 220 has a shape with an upper end being bent twice and a Z-shaped cross section. Both ends along a long side of a connection member 9A between the second main electrode terminal 6A and the first main electrode terminal 7A are bent in the same direction at an angle slightly smaller than 90 degrees and a cross section of the connection member 9A has a curved shape at a central part. <P>COPYRIGHT: (C)2013,JPO&INPIT |
