发明名称 |
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS INDUCED BY HIGH-K CAPPING METAL LAYERS |
摘要 |
A semiconductor device with a metal gate is disclosed. The device includes a semiconductor substrate including a plurality of source and drain features to form a p-channel and an n-channel. The device also includes a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a high-k (HK) dielectric layer formed over the semiconductor substrate. A tensile stress HK capping layer is formed on top of the HK dielectric layer in close proximity to the p-channel, and a compressive stress HK N-work function (N-WF) metal layer is formed on top of the HK dielectric layer in close proximity to the n-channel. A stack of metal gate layers is deposited over the capping layers.
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申请公布号 |
US2013075826(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201113240782 |
申请日期 |
2011.09.22 |
申请人 |
XU JEFF J.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
XU JEFF J. |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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