发明名称 Light-Emitting Element, Light-Emitting Device, and Electronic Device
摘要 A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.
申请公布号 US2013075713(A1) 申请公布日期 2013.03.28
申请号 US201213684515 申请日期 2012.11.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SHITAGAKI SATOKO;SEO SATOSHI;NOMURA RYOJI
分类号 H01L51/50 主分类号 H01L51/50
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