A method of forming aligned oxide patterns by electrolytic action on opposite surfaces of a wafer of semiconductor material,申请号GB19660040906-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	A method of forming aligned oxide patterns by electrolytic action on opposite surfaces of a wafer of semiconductor material
摘要
申请公布号	GB1143480(A)	申请公布日期	1969.02.19
申请号	GB19660040906	申请日期	1966.09.13
申请人	RADIO CORPORATION OF AMERICA	发明人
分类号	H01L21/316	主分类号	H01L21/316
代理机构		代理人
主权项
地址

您可能感兴趣的专利

VEHICLE SEAT SLIDING APPARATUS

PACHINKO GAME MACHINE

POWER SUPPLY DEVICE

PROGRESSIVE REFRACTIVE POWER LENS

THERMOCOUPLE THERMOMETER

EXHAUST GAS RECIRCULATION DEVICE OF INTERNAL COMBUSTION ENGINE

ORGANISM GROWTH PROMOTION BASE

METHOD OF ESTIMATING BUILDING RESPONSE IN EARTHQUAKE

SHELF BOARD HOLDER

DISTANCE MEASUREMENT APPARATUS, DISTANCE MEASUREMENT METHOD AND PROGRAM

METHOD OF COMMUNICATION OVER WIRELESS NETWORK

DOCUMENT CAMERA, PROJECTION SYSTEM, AND PROJECTION METHOD

STORAGE SYSTEM AND REMOTE COPY CONTROL METHOD

AIR CONDITIONER

VEHICLE FLOOR STRUCTURE

VARIABLE VALVE GEAR FOR INTERNAL COMBUSTION ENGINE

APPARATUS FOR MANUFACTURING EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER