Layout configurable electrostatic discharge device for integrated circuits

摘要

Electrostatic discharge protection device comprising: a first highly p-doped region (8) provided with a base contact (B); a first highly n-doped region (15) provided with a collector contact (C); a second highly n-doped region (9) provided with an emitter contact (E) and located between the first highly p-doped region (8) and the first highly n-doped region (15); the first highly p-doped region (8) and the second highly n-doped region (9) being applied in a weakly p-doped region (10; 17) which has a lateral overlap extending towards the first highly n-doped region (15), the lateral overlap having a width (d); the first highly n-doped region (15) being applied in a weakly n-doped region (14); the weakly p-doped region (10; 17) and the weakly n-doped region (14) being applied in a more weakly n-doped region (11); and a highly n-doped buried layer (12) located underneath the more weakly n-doped region (11) and extending below at least a portion of the weakly n-doped region (14) and at least a portion of the weakly p-doped region (10; 17). The device is provided for enabling a lateral current component (Icl) from the first highly n-doped region (15) in the direction of the second highly n-doped region (9) and a vertical current component (Icv) from the first highly n-doped region (9) via the buried layer (12) in the direction of the second highly n-doped region (9). The width (d) of the lateral overlap of the weakly p-doped region (10; 17) is determined in function of a predetermined ratio between the lateral current component (Icl) and the vertical current component (Icv). <IMAGE>