发明名称 |
Group III-V device structure having a selectively reduced impurity concentration |
摘要 |
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface. |
申请公布号 |
EP2573818(A1) |
申请公布日期 |
2013.03.27 |
申请号 |
EP20120184278 |
申请日期 |
2012.09.13 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BRIERE, MICHAEL A. |
分类号 |
H01L29/20;H01L21/02;H01L29/207;H01L29/36;H01L29/66;H01L29/778 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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