| 摘要 |
The object to provide a semiconductor device comprising a highly-integrated SGT-based CMOS inverter circuit is achieved by forming an inverter which comprises: a first transistor (148) including; an first island-shaped semiconductor layer (105a); a first gate insulating film (124a); a gate electrode (125); a first first-conductive-type high-concentration semiconductor layer (121) arranged above the first island-shaped semiconductor layer (105a); and a second first-conductive-type high-concentration semiconductor layer (120) arranged below the first island-shaped semiconductor layer (105a), and a second transistor (149) including; a second gate insulating film (124b) surrounding a part of the periphery of the gate electrode (125); a second semiconductor layer (103A) in contact with a part of the periphery of the second gate insulating film (124A); a first second-conductive-type high-concentration semiconductor layer (117) arranged above the second semiconductor layer (103A); and a second second-conductive-type high-concentration semiconductor layer (118) arranged below the second semiconductor layer (103A). |
