发明名称 |
Single transistor floating-body DRAM devices having vertical channel transistor structures |
摘要 |
Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided. |
申请公布号 |
US8405137(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US201113301254 |
申请日期 |
2011.11.21 |
申请人 |
HUO ZONG-LIANG;BAIK SEUNG-JAE;YEO IN-SEOK;YOON HONG-SIK;KIM SHI-EUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HUO ZONG-LIANG;BAIK SEUNG-JAE;YEO IN-SEOK;YOON HONG-SIK;KIM SHI-EUN |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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