发明名称 |
Semiconductor device production method and semiconductor device |
摘要 |
A semiconductor device production method according to the present invention includes the steps of: forming a LOCOS oxide film in a surface of a silicon layer by a LOCOS method; forming an impurity region in the silicon layer by introducing an impurity into the silicon layer; and sequentially removing parts of the LOCOS oxide film and the silicon layer to form a trench for isolation of the impurity region after the formation of the LOCOS oxide film and the impurity region. |
申请公布号 |
US8404559(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20090588611 |
申请日期 |
2009.10.21 |
申请人 |
TANAKA BUNGO;ROHM CO., LTD. |
发明人 |
TANAKA BUNGO |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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