THIN FILM TRANSISTOR

摘要

PURPOSE: A thin film transistor is provided to improve electron mobility by using a first semiconductor layer including indium oxide and a second semiconductor layer including tin oxide. CONSTITUTION: A gate electrode(200) is formed on a substrate(100). A gate insulating layer(300) is formed on the gate electrode. A channel layer(400) is formed on the gate insulating layer. The channel layer includes a first semiconductor layer(410) and a second semiconductor layer(420). A source electrode(510) and a drain electrode(520) electrically touch a part of the channel layer.