SURFACE TREATING METHOD OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, GaN CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE WITH EPITAXIAL LAYER, AND MANUFACTURING METHOD OF GaN CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE WITH EPITAXIAL LAYER

摘要

PROBLEM TO BE SOLVED: To provide a surface treating method of a nitride crystal for efficiently forming a smooth and high-quality surface on the nitride crystal, in order to efficiently obtain a nitride crystal substrate that can be used for a semiconductor device.

SOLUTION: A surface treating method of a GaN crystal is the surface treating method which chemically and mechanically polishes a surface of the GaN crystal which is a nitride crystal 1. In the surface treating method, an abrasive grain 16 of oxide is used, standard formation free energy of the abrasive grain 16 is -850 kJ/mol or more in a conversion value per 1 mol of an oxygen molecule, and Mohs hardness of the abrasive grain 16 is 4 or more.

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