发明名称 |
PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING METAL OXIDE SEMICONDUCTOR DEVICE |
摘要 |
A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter. |
申请公布号 |
US2013072028(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113237232 |
申请日期 |
2011.09.20 |
申请人 |
LIN CHIEN-LIANG;SUN TE-LIN;YEN YING-WEI;WANG YU-REN;UNITED MICROELECTRONICS CORP. |
发明人 |
LIN CHIEN-LIANG;SUN TE-LIN;YEN YING-WEI;WANG YU-REN |
分类号 |
H01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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