| 摘要 |
A semiconductor device, provided with: a channel layer made of InpAlqGa1-p-qN (0 ≤ p + q ≤ 1, 0 ≤ p, 0 ≤ q); a barrier layer made of InrAlsGa1-r-sN (0 ≤ r+s ≤ 1, 0 ≤ r), the barrier layer being formed on the channel layer and having a bandgap greater than that of the channel layer; a diffusion suppression layer made of IntAluGa1-t-uN (0 ≤ t + u ≤ 1, 0 ≤ t, s > u, the diffusion suppression layer being selectively formed on the barrier layer; a p-type electroconductive layer made of InxAlyGa1-x-yN (0 ≤ x + y ≤ 1, 0 ≤ x, 0 ≤ y) having p-type conductivity, the p-type electroconductive layer being formed on the diffusion suppression layer; and a gate electrode formed on the p-type electroconductive layer. |
