SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is capable of recovering reliability of data holding characteristics.

SOLUTION: The semiconductor memory device according to an embodiment includes: a laminate in which a plurality of insulating films and a plurality of electrode films are alternately laminated; semiconductor pillars penetrating the laminate; charge storage layers provided between the electrode films and the semiconductor pillars; tunnel layers provided between the charge storage layers and the semiconductor pillars; separation grooves which are provided between the semiconductor pillars and separate the electrode films in one direction orthogonal to a laminating direction of the laminate; and a heating part provided inside the separation grooves.

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