| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the recovery destruction of an IGBT and a diode, even if a distance between an IGBT region and a diode region formed in an identical substrate is substantially made small. <P>SOLUTION: The semiconductor device is constituted so that a P-type well 2 is formed in the surface layer of a semiconductor substrate including an N-type layer 3 and an IGBT region 10 and a FWD region 20 being repeatedly laid out alternately in the P-type well 2, wherein the IGBT region 10 and the FWD region 20 are arranged so that a distance L of current path in the P-type well 2 between a P<SP>+</SP>-type contact portion 13 hearest to the FWD region 20 side among the IGBT region 10 and the FWD region 20 satisfies the condition (L/W')×Rs>Rth. <P>COPYRIGHT: (C)2009,JPO&INPIT |
