发明名称 |
Semiconductor structure and method for manufacturing the same |
摘要 |
The present application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a semiconductor substrate; an epitaxial semiconductor layer formed on two side portions of the semiconductor substrate; a gate stack formed at a central position on the semiconductor substrate and abutting the epitaxial semiconductor layer, the gate comprising a gate conductor layer and a gate dielectric layer which is sandwiched between the gate conductor layer and the semiconductor substrate and surrounding the lateral surfaces of the gate conductor layer; and a sidewall spacer formed on the epitaxial semiconductor layer and surrounding the gate. The method for manufacturing the above semiconductor structure comprises forming raised source/drain regions in the epitaxial semiconductor layer utilizing the sacrificial gate. The semiconductor structure and the method for manufacturing the same can simplify the fabrication process for an ultra-thin SOI transistor and reduce the ON-state resistance and power consumption of the transistor. |
申请公布号 |
US8399315(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US201013062911 |
申请日期 |
2010.09.26 |
申请人 |
YIN HAIZHOU;LUO ZHIJIONG;ZHU HUILONG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
YIN HAIZHOU;LUO ZHIJIONG;ZHU HUILONG |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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