发明名称 |
3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same |
摘要 |
Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.
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申请公布号 |
US7229493(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20030352934 |
申请日期 |
2003.01.29 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
TSUCHIDA YOSHIHIKO;ONO YOSHINOBU |
分类号 |
H01L21/265;C30B25/02;C30B29/40;H01L21/205;H01L21/324 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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