MAGNETIC TUNNEL JUNCTION WITH AN IMPROVED TUNNEL BARRIER

摘要

PURPOSE: A magnetic tunnel junction with an improved tunnel barrier is provided to improve a breakdown voltage by including a multilayered barrier layer. CONSTITUTION: A first ferromagnetic layer(21) is formed. A tunnel barrier layer is formed. A second ferromagnetic layer(23) is formed. An Mg layer is deposited and the Mg layer is oxidized to change Mg into MgO for forming a tunnel barrier layer. The tunnel barrier layer includes two or more MgO layers(22a).