发明名称 |
Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines |
摘要 |
Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first region coupled to a bit line and a second region coupled to a source line. The apparatus may also comprise a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region. The apparatus may further comprise a third region coupled to a constant voltage source via a carrier injection line configured to inject charges into the body region through the second region. |
申请公布号 |
US8400811(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US20100768363 |
申请日期 |
2010.04.27 |
申请人 |
CARMAN ERIC S.;VAN BUSKIRK MICHAEL A.;LUTHRA YOGESH;MICRON TECHNOLOGY, INC. |
发明人 |
CARMAN ERIC S.;VAN BUSKIRK MICHAEL A.;LUTHRA YOGESH |
分类号 |
G11C5/06;G11C7/00 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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