发明名称 |
Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
摘要 |
A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.
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申请公布号 |
US8398778(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US20080076257 |
申请日期 |
2008.03.14 |
申请人 |
FANG TONG;KIM YUNSANG;KIM KEECHAN;STOJAKOVIC GEORGE;LAM RESEARCH CORPORATION |
发明人 |
FANG TONG;KIM YUNSANG;KIM KEECHAN;STOJAKOVIC GEORGE |
分类号 |
B08B6/00;C25F1/00;C25F3/30;C25F5/00 |
主分类号 |
B08B6/00 |
代理机构 |
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代理人 |
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主权项 |
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