发明名称 MANUFACTURING METHOD OF FLUX GATE SENSOR
摘要 A manufacturing method of a flux gate sensor may include: a first step of forming a first wiring layer on a substrate; a second step of forming a first insulating layer to cover the first wiring layer; a third step of forming a magnetic layer on the first insulating layer, the magnetic layer constituting a core of a flux gate; a fourth step of forming a second insulating layer on the first insulating layer to cover the magnetic layer; and a fifth step of forming a second wiring layer on the second insulating layer. The first wiring layer and the second wiring layer may be electrically connected to each other so that each constitutes a magnetic coil and a pickup coil, and at least a process temperature in each of the third, fourth, and fifth steps may be lower than a glass transition temperature of the first resin.
申请公布号 US2013064991(A1) 申请公布日期 2013.03.14
申请号 US201213671035 申请日期 2012.11.07
申请人 OHMORI KENICHI 发明人 OHMORI KENICHI
分类号 H05K3/10 主分类号 H05K3/10
代理机构 代理人
主权项
地址