| 摘要 |
PURPOSE: A substrate processing apparatus is provided to improve substrate processing efficiency by minimally exhausting plasma gas. CONSTITUTION: A process chamber(100) provides a space for processing a substrate. A substrate support unit is located in the process chamber and supports the substrate. A gas supply unit(300) supplies process gas to the process chamber. An exhaust member(500) exhausts the process gas from the process chamber to the outside. An induction member(600) induces a process gas flow to input the process gas from the process chamber to the exhaust member along a zigzag moving path. The moving path is formed between the inner side of the process chamber and the substrate support unit.
|
