发明名称 |
MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL |
摘要 |
A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length L in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length L to a crystal diameter d in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.
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申请公布号 |
US2013061799(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201213592555 |
申请日期 |
2012.08.23 |
申请人 |
HAYASHI MASAHIRO;SARAYAMA SEIJI;SATOH TAKASHI;NAMBU HIROSHI;KIMURA CHIHARU;MIYOSHI NAOYA;RICOH COMPANY, LTD. |
发明人 |
HAYASHI MASAHIRO;SARAYAMA SEIJI;SATOH TAKASHI;NAMBU HIROSHI;KIMURA CHIHARU;MIYOSHI NAOYA |
分类号 |
C30B19/02 |
主分类号 |
C30B19/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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