VAPOR-PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a vapor-phase growth apparatus and a vapor phase growth method which allow the control of temperature distribution in a wafer, and the further enhancement of the uniformity of the film thickness.

SOLUTION: A vapor-phase growth apparatus according to the invention comprises: a reaction chamber into which a wafer is loaded; a gas supply mechanism for supplying a processing gas into the reaction chamber; a support part to put the wafer on; a heater for heating the wafer from the downside thereof; a rotation-control part for rotating the wafer; a gas-exhaust mechanism including an air outlet for exhausting the gas from the reaction chamber; a reflector provided below the heater for reflecting heat from the heater toward the backside of the wafer; and an up-and-down driving part for moving the reflector up and down.

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