发明名称 |
Compound semiconductor epitaxial substrate and manufacturing method thereof |
摘要 |
A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on the front side of the above described InGaAs layer as the strained channel layer. |
申请公布号 |
US8395187(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US201113154624 |
申请日期 |
2011.06.07 |
申请人 |
NAKANO TSUYOSHI;HATA MASAHIKO;SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
NAKANO TSUYOSHI;HATA MASAHIKO |
分类号 |
H01L29/201;H01L31/062;H01L21/205;H01L21/336;H01L21/338;H01L29/06;H01L29/205;H01L29/778;H01L29/812;H01L31/113 |
主分类号 |
H01L29/201 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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