摘要 |
<p>The device has a floating conductive terminal (210) arranged between conductive elements (220) that are connected together via the floating conductive terminal. Switching units (231, 232, 234) are arranged between the conductive elements and the floating terminal, and connect or disconnect one of the conducting elements to the floating terminal, where the switching units comprise a memory cell. The switching units are controlled by the memory cell such as static RAM (SRAM), resistive RAM (RRAM), programmable metallization cell (PMC) or conductive bridging RAM (CBRAM).</p> |