A THERMOELECTRIC ZINC ANTIMONIDE THIN FILM

摘要

There is provided a method for manufacturing a thermoelectric zinc antimonide thin film wherein zinc and antimony are deposited on a hot substrate and wherein the deposited zinc and antimony form a layer of zinc antimonide. The substrate has a temperature of at least 100 degrees Celsius during deposition. The invention furthermore relates to fabrication of phase pure Zn4Sb3 thermoelectric thin films and phase pure thermoelectric ZnSb thin films, and furthermore to a zinc antimonide thin film comprising a mixture of the phases, such as ZnSb and Zn4Sb3, and still further relates to two completely new and hitherto unknown phases of zinc antimonide.