发明名称 VACUUM PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus in which the number of foreign particles attaching to an object to be processed is decreased. <P>SOLUTION: A semiconductor manufacturing apparatus comprises: a processing chamber for processing an object to be processed; gas supply means for supplying gas to the processing chamber; a mount electrode on which the object to be processed is placed; a turbo-molecular pump for depressurizing the processing chamber; and a butterfly valve provided between the turbo-molecular pump and the processing chamber for adjusting pressure in the processing chamber. In the semiconductor manufacturing apparatus, flappers of the butterfly valve are provided with stoppers for preventing foreign particles from falling. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013048287(A) 申请公布日期 2013.03.07
申请号 JP20120243350 申请日期 2012.11.05
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KOBAYASHI HIROYUKI;MAEDA KENJI;IZAWA MASARU;NAWATA MAKOTO
分类号 H01L21/02;C23C16/44;C23C16/50;H01L21/3065 主分类号 H01L21/02
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