发明名称 |
MICROCRYSTALLINE SILICON FILM, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
摘要 |
A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive. |
申请公布号 |
US2013056742(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201113696865 |
申请日期 |
2011.05.06 |
申请人 |
TEZUKA SACHIAKI;JINBO YASUHIRO;SASAKI TOSHINARI;MIYAIRI HIDEKAZU;KANZAKI YOSUKE;MORIGUCHI MASAO;SHARP KABUSHIKI KAISHA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TEZUKA SACHIAKI;JINBO YASUHIRO;SASAKI TOSHINARI;MIYAIRI HIDEKAZU;KANZAKI YOSUKE;MORIGUCHI MASAO |
分类号 |
H01L29/786;H01L21/205;H01L21/336;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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