发明名称 ENCAPSULATED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 An encapsulated semiconductor device includes: a first conduction path formative plate (1); a second conduction path formative plate (5) joined to the first conduction path formative plate; a power element (12) bonded to the first conduction path formative plate; a heatsink (14) held by the first conduction path formative plate with an insulation sheet (13) interposed between the heatsink and the first conduction path formative plate; and an encapsulation resin (9) configured to encapsulate the first and second conduction path formative plates. A through hole (3) or a lead gap (1b) is formed in a region of the first conduction path formative plate in contact with the insulation sheet. The insulation sheet is press-fitted into the through hole or the lead gap.
申请公布号 US2013056885(A1) 申请公布日期 2013.03.07
申请号 US201213697886 申请日期 2012.03.26
申请人 MINAMIO MASANORI;SASAOKA TATSUO;PANASONIC CORPORATION 发明人 MINAMIO MASANORI;SASAOKA TATSUO
分类号 H01L23/36;H01L21/56 主分类号 H01L23/36
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