GLASS COMPOSITION FOR SEMICONDUCTOR JUNCTION PROTECTION, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

A glass composition for semiconductor junction protection, characterized by comprising SiO2, Al2O3, MO, and nickel oxide and containing substantially none of Pb, P, As, Sb, Li, Na, and K (in the MO, M represents an alkaline earth metal). With this glass composition for semiconductor junction protection, which is a lead-free glass material, it is possible to produce a high-voltage semiconductor device as in the case where conventional glass materials which contain lead silicate as a main component are used. Furthermore, the bubbling that may occur at the boundary between an electrophoretically formed layer of the glass composition for semiconductor junction protection and the semiconductor base (silicon) during firing of the layer can be inhibited to avoid the trouble that the semiconductor device deteriorates in reverse-direction voltage characteristics.