| 摘要 |
<p>There is provided a tuning method for use by a semiconductor device capable of being fabricated using a plurality of fabrication processes comprising reading a fabrication identification included in the semiconductor device, associating the fabrication identification with one of the plurality of fabrication processes to determine an associated fabrication process used for fabrication of the semiconductor device, and tuning at least one parameter of the semiconductor device based on the associated fabrication process.
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