发明名称 |
Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings |
摘要 |
Provided is a semiconductor device including a substrate, and a first wiring layer, a second wiring layer, and a switch via formed on the substrate. The first wiring layer has first wiring formed therein and the second wiring layer has second wiring formed therein. The switch via connects the first wiring and the second wiring. The switch via includes at least at its bottom a switch element including a resistance change layer. A resistance value of the resistance change layer changes according to a history of an electric field applied thereto.
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申请公布号 |
US8390124(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20100656728 |
申请日期 |
2010.02.16 |
申请人 |
INOUE NAOYA;HAYASHI YOSHIHIRO;KANEKO KISHOU;RENESAS ELECTRONICS CORPORATION |
发明人 |
INOUE NAOYA;HAYASHI YOSHIHIRO;KANEKO KISHOU |
分类号 |
H01L23/48;H01L23/52;H01L29/32;H01L29/40;H01L29/423;H01L29/49;H01L29/74;H01L31/111 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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