| 摘要 |
PURPOSE: A thin film transistor and a method of manufacture thereof use the ZTO channel doped with boron. The uniformity of device is enhanced a lot. CONSTITUTION: The semiconductor film is formed on the substrate(100) into the compound of the zinc oxide tin which is the boron doping. The above semiconductor thin film is the patterning and the channel(120) is formed. The channel protection layer(125) is formed on channel. The gate insulating layer(130) is formed on the channel protection layer. The gate electrode is formed on the gate insulating layer. |
