HETERODYNE INTERFERENCE LITHOGRAPHY APPARATUS, AND METHOD FOR FORMING MICRO-PATTERNS, WAFER, AND SEMICONDUCTOR DEVICE USING THE APPARATUS

摘要

The present invention relates to a heterodyne interference lithography apparatus, and to a method for forming micro-patterns using same. More particularly, the present invention relates to an interference lithography apparatus and to a method for forming patterns, wherein the apparatus forms nanopatterns by causing interference using a laser capable of generating two or more wavelengths, and simultaneously forms micro-patterns by means of a beat phenomenon. To this end, disclosed is the heterodyne interference lithography apparatus, which comprises: a multi laser light source part (100) for generating laser beams having different wavelengths; a beam splitter (200) for transmitting or reflecting the laser beams; polarization inverting means (300) for inverting a polarized component of the transmitted laser beams; a beam expander (400) for expanding the inverted laser beams; and a pattern generating part (500) for forming a first pattern by causing the expanded laser beam and the reflection of the expanded laser beam to interfere with each other, and forming a second pattern by generating a new composite wave due to the wave interference caused by different wavelengths.