| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve device properties. <P>SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a substrate part 10a on a semiconductor substrate 10 and fin parts 10b on the substrate part; a process of forming a first silicon oxide film 12 on lateral faces of the fin parts; a process of forming a polysilazane film 13 on lateral faces of the first silicon oxide film, the polysilazane film 13 having a top face lower than a top face of the silicon oxide film; a process of converting the polysilazane film to a silicon oxynitride film 13a by nitriding and oxidation of the polysilazane film; a process of forming a second silicon oxide film 14 on a whole surface so as to cover the fin parts; a process of making the top face of the first silicon oxide film be lower than a top face of the silicon oxynitride film by etching the first silicon oxide film and the second silicon oxide film; and a process of forming a high-concentration semiconductor layer 40 in the fin parts. <P>COPYRIGHT: (C)2013,JPO&INPIT |
