| 摘要 |
The invention relates, inter alia, to a method for producing a conductor structure, comprising at least one silicon nanowire (4) having a diameter of less than 50 nm, which nanowire is contacted via at least two points by electrodes (11, 13, 30), and wherein the at least one nanowire (4) and the electrodes (11, 13, 30) are arranged on one plane on a substrate (1, 5), which is characterized in that a) catalytically active metal nanoparticles having a diameter in the range of 0.5-50 nm are deposited on the surface (2) of an insulating substrate (1), b) the surface and the metal nanoparticles deposited thereon are exposed to a gas flow containing at least one gaseous silicon component at a temperature in the range of 300-1100 ºC and during a time period in the range of 10-200 minutes, wherein at least one nanowire (4) of a length in the range of 5-200 µm projecting from the substrate is formed, c) said at least one nanowire (4) projecting from the surface of the substrate (1) is deposited in one plane with one of the contact surfaces (6) corresponding to the surface (2) of the insulating substrate (1) by applying a secondary substrate (5), and d) either the at least one nanowire (4) deposited on the insulating substrate (1) is contacted at two different points by electrodes (11, 13, 30) or the at least one nanowire adhering to the secondary substrate (5) is contacted at two different points by electrodes (11, 13, 30). |
