| 摘要 |
The present invention provides a method for stably generating cleaning plasma regardless of a condition of CO-containing plasma. When a magnetic film formed on a wafer 802 to be etched is processed with the CO-containing plasma which is generated by applying a source electric power to a CO-containing gas containing elements of C and O, which has been introduced into a vacuum chamber 801, to convert the CO-containing gas into a plasma state, the method includes: applying predetermined processing to the magnetic film formed on the wafer 802 to be etched by using the CO-containing plasma; then introducing a cleaning gas into the vacuum chamber in a state of applying the source electric power 806 to the antenna; and then stopping the introduction of the CO-containing gas into the vacuum chamber to thereby generate the cleaning plasma with the use of a predetermined cleaning gas. |
