WAFER PATTERN INSPECTION APPARATUS AND METHOD

摘要

PURPOSE: An apparatus and method for inspecting a wafer pattern are provided to improve inspection reliability by measuring the width, length and height of a pattern formed on a wafer surface in comparison with a plane. CONSTITUTION: A sub chamber(30) guides a wafer on which pattern and etching processes are completed to a main chamber. A pattern inspecting unit(50) is installed in the main chamber and inspects a pattern on the wafer. A control unit analyzes the pattern based on the measurement of the pattern analyzing unit. The pattern inspecting unit is composed of a first inspecting unit(52) and a second inspecting unit(54). The first inspecting unit measures the length and width of the wafer pattern. The second inspecting unit measures the incline length of the wafer pattern.