| 摘要 |
<p>A glass substrate for forming a through-substrate via of a semiconductor device is provided, in which the ±-ray emission is significantly suppressed and to which a laser beam machining is possible. The present invention is characterized in that a plurality of penetration holes is provided, and an ±-count is 0.05 c/cm 2 ·h or less, a SiO 2 content is 40 wt% or higher, and a sum total content of Li 2 O (wt%) + Na 2 O (wt%) + K 2 O (Wt%) is 6.0 wt% or lower, and an average coefficient of thermal expansion at 50°C to 350°C is in a range of 20 x 10 -7 /K to 40 x 10 -7 /K.</p> |
