| 摘要 |
A field-effect transistor having at least two insulated-gate electrodes comprises an island zone of the same conductivity type as the electrode zones (source and drain zones) situated between two gate electrodes. According to the invention an aperture is provided in said island zone in which aperture a circuit element is provided, particularly a safety diode, which is connected to a gate electrode. In this case a particularly simple and short connection is possible between the circuit element and a gate electrode.
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