| 发明名称 |
Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology |
| 摘要 |
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.
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| 申请公布号 |
US8384125(B2) |
申请公布日期 |
2013.02.26 |
| 申请号 |
US201113035549 |
申请日期 |
2011.02.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;GAUTHIER, JR. ROBERT J.;LI JUNJUN;MITRA SOUVICK |
发明人 |
GAUTHIER, JR. ROBERT J.;LI JUNJUN;MITRA SOUVICK |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
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