| 发明名称 |
Semiconductor devices and methods of fabricating the same |
| 摘要 |
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.
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| 申请公布号 |
US8384439(B2) |
申请公布日期 |
2013.02.26 |
| 申请号 |
US20090591701 |
申请日期 |
2009.11.30 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PARK JAE-CHUL;SONG I-HUN;PARK YOUNG-SOO;KWON KEE-WON;KIM CHANG-JUNG;KIM KYOUNG-KOOK;PARK SUNG-HO;LEE SUNG-HOON;KIM SANG-WOOK;KIM SUN-IL |
发明人 |
PARK JAE-CHUL;SONG I-HUN;PARK YOUNG-SOO;KWON KEE-WON;KIM CHANG-JUNG;KIM KYOUNG-KOOK;PARK SUNG-HO;LEE SUNG-HOON;KIM SANG-WOOK;KIM SUN-IL |
| 分类号 |
H01L25/00;H03K19/00 |
主分类号 |
H01L25/00 |
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