| 摘要 |
According to one embodiment, a semiconductor device includes a semiconductor substrate, an inter-layer insulating film, a wiring, and a via. The inter-layer insulating film is provided on the semiconductor substrate. The wiring is provided in the inter-layer insulating film. The via is provided in the inter-layer insulating film. Inside the inter-layer insulating film in a circumferential region around a device region, a vertical structure body is formed in which the wiring and the via are vertically connected. At least in an upper portion inside the inter-layer insulating film in an edge region located around the circumferential region and constituting an outer edge portion, no vertical structure body is formed in which the wiring and the via are vertically connected. |
