发明名称 |
Semiconductor device with vertical channel transistor |
摘要 |
Provided is a semiconductor device having a vertical channel transistor and method of fabricating the same. The semiconductor device includes first and second field effect transistors, wherein a channel region of the first field effect transistor serves as source/drain electrodes of the second field effect transistor, and a channel region of the second field effect transistor serves as source/drain electrodes of the first field effect transistor.
|
申请公布号 |
US8384141(B2) |
申请公布日期 |
2013.02.26 |
申请号 |
US201113097343 |
申请日期 |
2011.04.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KIM DAEIK;OH YONGCHUL;HWANG YOOSANG;CHUNG HYUN-WOO;CHO YOUNG-SEUNG |
发明人 |
KIM DAEIK;OH YONGCHUL;HWANG YOOSANG;CHUNG HYUN-WOO;CHO YOUNG-SEUNG |
分类号 |
H01L27/108;H01L21/336;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|