发明名称 Radio frequency IC device and method of manufacturing the same
摘要 A radio frequency IC device that prevents variations in the value of capacitive coupling between a radio frequency IC element and a radiation electrode and has good signal transmission efficiency includes a radio frequency IC element including input/output electrodes and, a first base including intermediate electrodes that are capacitively coupled to the input/output electrodes and have capacitance values C1a and C1b, respectively, and a second base including radiation electrodes and that are capacitively coupled to the intermediate electrodes and have capacitance values C2a and C2b, respectively. A capacitance C1 obtained by combining C1a and C1b is smaller than a capacitance C2 obtained by combining C2a and C2b.
申请公布号 US8381997(B2) 申请公布日期 2013.02.26
申请号 US201113308575 申请日期 2011.12.01
申请人 MURATA MANUFACTURING CO., LTD.;OSAMURA MAKOTO;KUBOTA KENJI;KATO NOBORU 发明人 OSAMURA MAKOTO;KUBOTA KENJI;KATO NOBORU
分类号 G06K19/067 主分类号 G06K19/067
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