PROCESS FOR PRODUCING SILICON OXIDE FILMS FROM ORGANOAMINOSILANE PRECURSORS

摘要

PURPOSE: A method for depositing a silicon oxide film on a substrate by CVD(Chemical Vapor Deposition) is provided to form the silicon oxide film using an organoaminosilane precursor. CONSTITUTION: A method for forming a silicon oxide film through a deposition process comprises: a step of providing a substrate in a deposition chamber; a step of introducing aminosilane of chemical formula B or C, or a mixture thereof in the deposition chamber; a step of introducing oxygen, hydrogen peroxide, ozone, nitrogen monoxide, or a mixture thereof into the deposition chamber; and a step of reacting the oxidant with aminosilane and providing the silicon oxide film onto the substrate. The temperature of the substrate is 350-700 deg. C. during deposition. The deposition process is CVD. The method additionally comprises a step of introducing inert gas into the deposition chamber. A composition for depositing a silicon oxide film or a silicon oxynitride film contains aminosilane of chemical formula B or C, or a mixture thereof.