| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cleaning liquid used in a cleaning step after a CMP step for a substrate for a semiconductor device, particularly one having Cu wiring on the surface, having a sufficient anticorrosiveness to the Cu wiring, and suppressing the generation of residues and the adherence of the residue on the substrate surface. <P>SOLUTION: The cleaning liquid of a substrate for a semiconductor device contains the following components (A) to (E), and has a pH of ≥10. (A): an organic quaternary ammonium hydroxide represented by formula (1): (R<SP POS="POST">1</SP>)<SB POS="POST">4</SB>N<SP POS="POST">+</SP>OH<SP POS="POST">-</SP>wherein R<SP POS="POST">1</SP>is an alkyl group which may be substituted with a hydroxyl group, an alkoxy group or a halogen, the four R<SP POS="POST">1</SP>may be identical or different from each other. (B): a surfactant. (C) a chelating agent. (D): an amino acid having a sulfur atom. (E): water. <P>COPYRIGHT: (C)2013,JPO&INPIT |
